Gallium nitride (GaN) is still a new technology, and it’s rapidly diversifying in terms of applications. After all, GaN semiconductors entered mass production in 2018. CES 2023 in Las Vegas was a ...
Gallium nitride (GaN) is a wide bandgap material that offers significant advantages in high-power radio frequency (RF) applications. Compared to traditional semiconductors (such as silicon), gallium ...
Renesas Electronics has introduced a new GaN‑based Half‑Wave LLC (HWLLC) charging platform capable of delivering 500W or more, marking a significant expansion of its AC/DC and power‑adapter portfolio ...
GENEVA, SWITZERLAND, April 1, 2026 / EINPresswire.com / — STMicroelectronics has announced two new high-speed half-bridge gate drivers that bring gallium-nitride (GaN) efficiency, thermal performance, ...
EPC Highlights Gen 7 GaN for AI Infrastructure and GaN Integrated Circuits for Robotics at APEC 2026
EL SEGUNDO, CA, UNITED STATES, February 26, 2026 /EINPresswire.com/ — Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN ...
It’s okay to start using gallium-nitride (GaN) devices in your new designs. GaN transistors have become extremely popular in recent years. These wide-bandgap devices have been replacing LDMOS ...
DUBLIN--(BUSINESS WIRE)--The "GaN Power Device Market by Device Type, Voltage Range, Application, Vertical, and Geography - Global Forecast to 2023" report has been added to Research and Markets' ...
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